THERMOLUMINESCENCE PROPERTIES OF ERBIUM DOPED SrSO4
نویسندگان
چکیده
منابع مشابه
Photoluminescence properties of erbium doped InGaN epilayers
We report on the photoluminescence properties of erbium Er doped InxGa1−xNa epilayers synthesized by metal organic chemical vapor deposition. The crystalline quality and surface morphology of Er doped In0.05Ga0.95N were nearly identical to those of Er doped GaN. The photoluminescence intensity of the 1.54 m emission in Er doped In0.05Ga0.95N was an order of magnitude lower than in Er doped GaN ...
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ژورنال
عنوان ژورنال: Al-Azhar Bulletin of Science
سال: 2017
ISSN: 1110-2535
DOI: 10.21608/absb.2017.8173